stb3na60-1 n - channel enhancement mode fast power mos transistor preliminary data n typical r ds(on) = 0.7 w n avalanche rugged technology n 30v gate to source voltage rating n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitances n gate charge minimized applications n high current, high speed switching n switch mode power supplies (smps) n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain- gate voltage (r gs = 20 k w ) 600 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c 2.9 a i d drain current (continuous) at t c = 100 o c 1.8 a i dm ( ) drain current (pulsed) 11.6 a p tot total dissipation at t c = 25 o c80w derating factor 0.64 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d stb3na60-1 600 v < 4 w 2.9 a march 1996 1 2 3 i2pak to-262 1/9
thermal data r thj-case r thj-amb r thj-amb t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1.56 62.5 0.5 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 2.9 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 42 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 1.6 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 1.8 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10 v i d = 1.5 a v gs = 10 v i d = 1.5 a t c = 100 o c 3.3 4 8 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 2.9 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 1.5 a 1 2 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 380 57 17 500 75 23 pf pf pf stb3na60-1 2/9
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 300 v i d = 1.5 a r g = 18 w v gs = 10 v (see test circuit, figure 3) 14 25 20 35 ns ns (di/dt) on turn-on current slope v dd = 400 v i d = 3 a r g = 18 w v gs = 10 v (see test circuit, figure 5) 300 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge i d = 3 a v gs = 10 v v dd = max rating x 0.8 22 6 9 30 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480 v i d = 3 a r g = 18 w v gs = 10 v (see test circuit, figure 5) 13 24 12 18 34 17 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 2.9 11.6 a a v sd ( * ) forward on voltage i sd = 2.9 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 3 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c (see test circuit, figure 5) 460 5.6 24 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area thermal impedance stb3na60-1 3/9
derating curve transfer characteristics static drain-source on resistance output characteristics transconductance gate charge vs gate-source voltage stb3na60-1 4/9
capacitance variations normalized on resistance vs temperature turn-off drain-source voltage slope normalized gate threshold voltage vs temperature turn-on current s lope cross-over time stb3na60-1 5/9
switching safe operating area source-drain diode forward characteristics accidental overload area fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform stb3na60-1 6/9
fig. 3: switching times test circuits for resistive load fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit stb3na60-1 7/9
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b1 1.2 1.38 0.047 0.054 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 e 10 10.28 0.393 0.404 l 13.2 13.5 0.519 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.37 0.050 0.054 l l1 b2 b d e a c2 c a1 l2 e to-262 (i2pak) mechanical data stb3na60-1 8/9
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . stb3na60-1 9/9
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